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| a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units i ceo v ce = 15 v 500 na i cbo v cb = 15 v 100 na h fe v ce = 15 v i c = 15 ma 50 120 220 --- posc v cb = 15 v i c = 30ma f = 3.0 ghz i c = 30 ma f = 4.3 ghz i c = 30 ma f = 6.0 ghz i c = 30 ma f = 8.0 ghz 19 21.5 20.5 17 12 dbm n/c phase noise to carrier @ 1.0 khz from the carrier(ssb) f = 4.3 ghz -50 dbc/hz npn silicon rf transistor hxtr 4101 description: the HXTR4101 is a common base device designed for oscillator applications up to 10 ghz. maximum ratings i c 70 ma v ebo 1.5 v v ceo 20 v t j 300 c t stg -65 c to 250 c p t 900 mw @ t c = 25 c package style dimensions in millimeters 1 = collector 2 & 4 = base 3 = emitter
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